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MSA-0886 查看數據表(PDF) - HP => Agilent Technologies

零件编号MSA-0886 HP
HP => Agilent Technologies HP
产品描述 (功能)Cascadable Silicon Bipolar MMIC Amplifier
MSA-0886 Datasheet PDF : 4 Pages
1 2 3 4
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0886
Features
• Usable Gain to 5.5␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
22.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.3␣ dB Typical at 1.0␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices.”
Description
The MSA-0886 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 gain block
above 0.5␣ GHz and can be used as
a high gain transistor below this
frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commer-
cial and industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
86 Plastic Package
ion implantation, and gold metalli-
zation to achieve excellent perfor-
mance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
4
3
1 MSA
2
RFC (Optional)
C block
Vd = 7.8 V
OUT
5965-9547E
6-426
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Description
The MSA-0886 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent perfor mance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Features
• Usable Gain to 5.5 GHz
• High Gain:
   32.5 dB Typical at 0.1 GHz
   22.5 dB Typical at 1.0 GHz
• Low Noise Figure:
   3.3 dB Typical at 1.0 GHz
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available[1]

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