|Número de pieza||componentes Descripción||fabricante|
|ISB35832||HCMOS STRUCTURED ARRAY|
|ISB35832 Datasheet PDF : 15 Pages |
Table 11. General Interface DC Electrical Characteristics (Note 1)
Low Level Input Current
High Level Input Current
Tri-State Output Leakage
Bidi, I/O Capacitance
I/O Latch Up Current
VI = Vdd
VO = 0V or Vdd
Note 1. These are extended voltage and temperature specifications
VDD from 2.7 V to 3.6 V
Temperature Ambient from -55 to 125 degrees Centigrade
Note 2. Adherence to rules in Power Pin / Pad Specifications Required
Note 3. Excluding Package
Note 4. At 0.0 Volts
Note 5. Human Body Model
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no
responsability for the consequences of use of such information nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights
of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice.
This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or
systems without the express written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - All rights reserved.
Purchase of I2C Components by SGS-THOMSON Microelectronics conveys a license under the Philips I2C Patent.
Rights to use these components in an I2C system is granted provided that the system conforms to the I2C Standard
Specification as defined by Philips.
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