MMSF5P02HD View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

View to exact match

MMSF5P02HD

SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS RDS(on) = 0.025 OHM

Motorola => Freescale 

MMSF5N02HD

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

—

—

IGSS

—

VGS(th)

1.0

—

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 5.0 Adc)

(VGS = 4.5 Vdc, ID = 2.5 Adc)

RDS(on)

—

—

Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)

gFS

3.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 5.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

See Figure 8

(VDS = 16 Vdc, ID = 5.0 Adc,

VGS = 10 Vdc)

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 5.0 Adc, VGS = 0 Vdc)

(IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

See Figure 15

(IS = 5.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

ta

—

tb

—

Reverse Recovery Stored Charge

QRR

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

—

—

41

—

mV/°C

µAdc

0.02

1.0

—

10

—

100

nAdc

1.5

4.0

0.0185

0.0219

12

2.0

—

0.025

0.040

—

Vdc

mV/°C

Ohm

Mhos

1130

1582

pF

464

650

117

235

15

30

ns

93

185

35

70

40

80

9.0

—

53

—

56

—

39

—

30.3

43

nC

3.0

—

7.5

—

6.0

—

Vdc

0.82

1.0

0.69

—

32

—

ns

24

—

8.0

—

0.045

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

Share Link: