MMSF5N02HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
VGS(th)
1.0
—
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
—
—
Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)
gFS
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 5.0 Adc, VGS = 0 Vdc)
(IS = 5.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
Reverse Recovery Time
See Figure 15
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
—
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
41
—
mV/°C
µAdc
0.02
1.0
—
10
—
100
nAdc
1.5
4.0
0.0185
0.0219
12
2.0
—
0.025
0.040
—
Vdc
mV/°C
Ohm
Mhos
1130
1582
pF
464
650
117
235
15
30
ns
93
185
35
70
40
80
9.0
—
53
—
56
—
39
—
30.3
43
nC
3.0
—
7.5
—
6.0
—
Vdc
0.82
1.0
0.69
—
32
—
ns
24
—
8.0
—
0.045
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data