MMSF5P02HD View Datasheet(PDF) - Motorola => Freescale
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MMSF5P02HD Datasheet PDF : 10 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF5N02HD/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single N-Channel
MMSF5N02HD
Motorola Preferred Device
Field Effect Transistors
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
G
switched and offer additional safety margin against unexpected
voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
™
D
S
SINGLE TMOS
POWER MOSFET
5.0 AMPERES
20 VOLTS
RDS(on) = 0.025 OHM
CASE 751–05, Style 13
SO–8
N–C
18
Drain
Source
27
Drain
Source
36
Drain
Gate
45
Drain
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 6.0 mH, RG = 25 Ω)
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
DEVICE MARKING
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
20
20
± 20
8.2
5.6
41
2.5
– 55 to 150
675
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
mJ
RθJA
TL
50
°C/W
260
°C
S5N02
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF5N02HDR2
13″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
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