MJE127 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

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MJE127

COMPLEMENTARY SILICON POWER DARLINGTONS 5 AMPERES 100 VOLTS 30 WATTS

ON Semiconductor 

NPN

MJF122

3

TJ = 25°C

2.5

MJF122 MJF127

PNP

MJF127

3

TJ = 25°C

2.5

2

2

1.5

VBE(sat) @ IC/IB = 250

1.5 VBE @ VCE = 4 V

VBE @ VCE = 4 V

1

VCE(sat) @ IC/IB = 250

0.5

0.1

0.2 0.3 0.5 0.7 1

2 3 5 7 10

IC, COLLECTOR CURRENT (AMP)

1

0.5

0.1

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

0.2 0.3 0.5 0.7 1

23

IC, COLLECTOR CURRENT (AMP)

Figure 10. Typical “On” Voltages

5 7 10

+5

+4

*IC/IB ≤ hFE 3

+3

+2

+1

25°C to 150°C

– 55°C to 25°C

+5

+4

*IC/IB ≤ hFE 3

+3

+2

+1

25°C to 150°C

0

0

–1

–2

–3

–4

–5

0.1

*θVC FOR VCE(sat)

25°C to 150°C

θVB FOR VBE

– 55°C to 25°C

0.2 0.3 0.5 0.7 1

23 5

IC, COLLECTOR CURRENT (AMP)

7 10

– 1 *θVC FOR VCE(sat)

–2

– 55°C to 25°C

– 3 θVB FOR VBE

–4

– 55°C to 25°C 25°C to 150°C

–5

0.1

0.2 0.3 0.5

1

2 3 5 7 10

IC, COLLECTOR CURRENT (AMP)

Figure 11. Typical Temperature Coefficients

105

REVERSE

104

FORWARD

VCE = 30 V

103

105

REVERSE

104

FORWARD

VCE = 30 V

103

102

TJ = 150°C

101

100

100°C

102

101 TJ = 150°C

100°C

100

10–1

25°C

– 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1

VBE, BASE–EMITTER VOLTAGE (VOLTS)

+ 1.2 + 1.4

10–1

25°C

+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1

VBE, BASE–EMITTER VOLTAGE (VOLTS)

– 1.2 – 1.4

Figure 12. Typical Collector Cut–Off Region

Motorola Bipolar Power Transistor Device Data

5

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