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M12GZ47 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
M12GZ47 Datasheet PDF : 5 Pages
1 2 3 4 5
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
I
II
Gate Trigger Voltage
III
IV
I
SM12GZ47
II
SM12JZ47
III
Gate Trigger
IV
Current
I
SM12GZ47A
II
SM12JZ47A
III
IV
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of OffState
Voltage
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
Critical Rate of
Rise of OffState
Voltage at
Commutation
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
20
µA
T2 (+) , Gate (+)
1.5
VGT
VD = 12V,
RL = 20
T2 (+) , Gate ()
1.5
V
T2 () , Gate ()
1.5
T2 () , Gate (+)
T2 (+) , Gate (+)
30
T2 (+) , Gate ()
30
T2 () , Gate ()
30
IGT
VD = 12V,
RL = 20
T2 () , Gate (+)
mA
T2 (+) , Gate (+)
20
T2 (+) , Gate ()
20
T2 () , Gate ()
20
T2 () , Gate (+)
VTM
VGD
IH
Rth (jc)
ITM = 17A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
1.5
V
0.2
V
50
mA
3.0 °C / W
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
300
V / µs
200
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = 6.5A / ms
10
V / µs
4
MARKING
*NUMBER
SYMBOL
*1
TOSHIBA PRODUCT MARK
SM12GZ47, SM12GZ47A
*2
TYPE
SM12JZ47, SM12JZ47A
*3
SM12GZ47A, SM12JZ47A
MARK
M12GZ47
M12JZ47
A
Example
*4
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-10
 

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