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KM416V254D View Datasheet(PDF) - Samsung

Part NameDescriptionManufacturer
KM416V254D 256K x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung
Samsung Samsung
KM416V254D Datasheet PDF : 36 Pages
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KM416C254D, KM416V254D
CMOS DRAM
AC CHARACTERISTICS (Continued)
Parameter
Symbol
Data set-up time
Data hold time
Refresh period (Normal)
Refresh period (L-ver)
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
CAS precharge time (C-B-R counter test cycle)
Access time from CAS precharge
Hyper Page mode cycle time
Hyper Page read-modify-write cycle time
CAS precharge time (Hyper Page cycle)
RAS pulse width (Hyper Page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper Page Cycle)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
Note) *1 : 5V only
tDS
tDH
tREF
tREF
tCWD
tRWD
tAWD
tCPWD
tCSR
tCHR
tRPC
tCPT
tCPA
tHPC
tHPRWC
tCP
tRASP
tRHCP
tOEA
tOED
tOEZ
tOEH
tDOH
tREZ
tWEZ
tWED
tOCH
tCHO
tOEP
tWPE
tRASS
tRPS
tCHS
-5*1
Min Max
0
8
8
128
32
67
42
45
5
10
5
20
28
20
57
8
50 100K
30
15
13
3
13
15
5
3
15
3
13
13
5
5
5
5
100
90
-50
-6
Min Max
0
10
8
128
32
77
47
52
5
10
5
20
35
25
66
10
60 100K
35
15
13
3
13
15
5
3
15
3
13
13
5
5
5
5
100
110
-50
-7
Min Max
0
15
8
128
42
92
57
62
5
10
5
25
40
30
81
10
70 100K
40
20
18
3
18
20
5
3
20
3
18
18
5
5
5
5
100
130
-50
Units Notes
ns
9,19
ns
9,19
ms
ms
ns
7,15
ns
7
ns
7
ns
7
ns
17
ns
18
ns
ns
ns
3
ns
11
ns
11
ns
14
ns
ns
ns
3
ns
ns
6
ns
ns
ns
6,12
ns
6
ns
ns
ns
ns
ns
us 20,21,22
ns 20,21,22
ns 20,21,22
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