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KM416V254D View Datasheet(PDF) - Samsung

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KM416V254D Datasheet PDF : 36 Pages
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KM416C254D, KM416V254D
CMOS DRAM
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A8]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
AC CHARACTERISTICS (0°CTA70°C, See note 1,2)
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5*1
Min Max
-6
Min Max
Random read or write cycle time
tRC
84
104
Read-modify-write cycle time
tRWC
116
138
Access time from RAS
tRAC
50
60
Access time from CAS
tCAC
Access time from column address
tAA
15
15
25
30
CAS to output in Low-Z
tCLZ
3
3
Output buffer turn-off delay from CAS
tCEZ
3
13
3
13
Transition time (rise and fall)
tT
2
50
2
50
RAS precharge time
tRP
30
40
RAS pulse width
tRAS
50
10K
60
10K
RAS hold time
tRSH
15
15
CAS hold time
CAS pulse width
RAS to CAS delay time
tCSH
tCAS
tRCD
40
50
8
10K
10
10K
20
35
20
45
RAS to column address delay time
tRAD
15
25
15
30
CAS to RAS precharge time
tCRP
5
5
Row address set-up time
tASR
0
0
Row address hold time
tRAH
10
10
Column address set-up time
Column address hold time
tASC
0
0
tCAH
8
10
Column address to RAS lead time
tRAL
25
30
Read command set-up time
tRCS
0
0
Read command hold time referenced to CAS tRCH
0
0
Read command hold time referenced to RAS tRRH
0
0
Write command set-up time
tWCS
0
0
Write command hold time
tWCH
10
10
Write command pulse width
tWP
10
10
Write command to RAS lead time
tRWL
13
15
Write command to CAS lead time
tCWL
8
10
Note) *1 : 5V only
Max
Units
5
pF
7
pF
7
pF
-7
Min Max
124
163
70
20
35
3
3
18
2
50
50
70
10K
20
60
15
10K
20
50
15
35
5
0
10
0
15
35
0
0
0
0
10
10
15
15
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3,4,10
3,4,5
3,10
3
6,12
2
4
10
13
13
8
8
7
16
 

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