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KM416V254D View Datasheet(PDF) - Samsung

Part Name
Description
MFG CO.
KM416V254D Datasheet PDF : 36 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
KM416C254D, KM416V254D
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
KM416V254D
Max
-5
-
ICC1
Dont care
-6
70
-7
65
ICC2
Dont care
Dont care
1
-5
-
ICC3
Dont care
-6
70
-7
65
-5
-
ICC4
Dont care
-6
60
-7
55
ICC5
Normal
L
Dont care
0.5
100
-5
-
ICC6
Dont care
-6
70
-7
65
ICC7
L
Dont care
200
ICCS
L
Dont care
100
KM416C254D
110
90
80
2
110
90
80
90
80
70
1
150
110
90
80
300
200
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Dont care, TRC=125us, TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A8=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3, ICC6 and ICC7, address can be changed maximum once while RAS=VIL. In
ICC4, address can be changed maximum once within one Hyper page mode cycle time, tHPC.
 

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