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KM416C254D View Datasheet(PDF) - Samsung

Part Name
Description
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KM416C254D Datasheet PDF : 36 Pages
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KM416C254D, KM416V254D
CMOS DRAM
256K x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access
of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or
Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-
only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode
DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reli-
ability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
• Part Identification
- KM416C254D/DL (5V, 512 Ref.)
- KM416V254D/DL (3.3V, 512 Ref.)
Active Power Dissipation
Speed
-5
-6
-7
3.3V(512 Ref.)
-
255
235
Unit : mW
5V(512 Ref.)
605
495
440
Refresh Cycles
Part VCC Refresh
NO.
cycle
C254D 5V
512
V254D 3.3V
Refresh period
Normal L-ver
8ms
128ms
Performance Range
Speed
-5
-6
-7
tRAC
50ns
60ns
70ns
tCAC
15ns
15ns
20ns
tRC
84ns
104ns
124ns
tHPC
20ns
25ns
30ns
Remark
5V only
5V/3.3V
5V/3.3V
• Extended Data Out Mode operation
• 2 CAS Byte/Wrod Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 40-pin SOJ 400mil and 44(40)-pin
packages
• Triple +5V±10% power supply (5V product)
• Triple +3.3V±0.3V power supply (3.3V product)
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
A0~A8
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Memory Array
262,144 x16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
 

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