IRFD1Z0 View Datasheet(PDF) - Intersil

Part Name

Description

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IRFD1Z0

0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs

Intersil 

IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3

Typical Performance Curves Unless Otherwise Specified (Continued)

10

IRFD1Z0, IRFD1Z1

IRFD1Z2,

IRFD1Z3

1 IRFD1Z0,

IRFD1Z1

IRFD1Z2,

IRFD1Z3

0.1

10µs

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

100µs

1ms

0.01 TJ = 150oC MAX

SINGLE PULSE

IRFD1Z1,

IRFD1Z3

10ms

DC

IRFD1Z0, IRFD1Z2

1

10

100

1000

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

2.0

10V

9V

1.6

PULSE DURATION = 80µs

8V

1.2

7V

0.8

VGS = 6V

0.4

5V

4V

0

0

10

20

30

40

50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. OUTPUT CHARACTERISTICS

2.0

PULSE DURATION = 80µs

1.6

10V

9V

8V

1.2

7V

0.8

VGS = 6V

0.4

0

0

1

2

3

4

VDS, DRAIN TO SOURCE VOLTAGE (V)

5V

4V

5

FIGURE 5. SATURATION CHARACTERISTICS

1.2

PULSE DURATION = 80µs

VDS > ID(ON) x rDS(ON)MAX

1.0

0.8

0.6

TJ = -55oC

TJ = 25oC

TJ = 125oC

0.4

0.2

0

0

2

4

6

8

10

12

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS

8

PULSE DURATION = 2µs

VGS = 10V

6

4

VGS = 20V

2

2.5

VGS = 10V, ID = 0.5A

2.0

1.5

1.0

0.5

0

0

1

2

3

4

ID, DRAIN CURRENT (A)

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

0

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

5-4

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