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IRFD1Z1 View Datasheet(PDF) - Intersil

Part Name
Description
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IRFD1Z1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFD1Z0
IRFD1Z1
Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . .VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . .
100
100
0.5
4.0
±20
1.0
0.008
60
60
0.5
4.0
±20
1.0
0.008
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg
-55 to 150
300
260
-55 to 150
300
260
IRFD1Z2
100
100
0.4
3.2
±20
1.0
0.008
-55 to 150
300
260
IRFD1Z3
60
60
0.4
3.2
±20
1.0
0.008
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRFD1Z0, IRFD1Z2
BVDSS ID = 250µA, VGS = 0V (See Figure 9)
100 -
-
V
IRFD1Z1, IRFD1Z3
60
-
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRFD1Z0, IRFD1Z1
VGS(TH)
IDSS
ID(ON)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V,
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
(See Figure 6)
2.0 - 4.0
V
-
-
25
µA
-
- 250 µA
0.5 -
-
A
IRFD1Z2, IRFD1Z3
0.4 -
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRFD1Z0, IRFD1Z1
IGSS
rDS(ON)
VGS = ±20V
ID = 0.25A, VGS = 10V (See Figures 7, 8)
-
- ±100 nA
-
2.2 2.4
IRFD1Z2, IRFD1Z3
-
2.8 3.2
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 0.25A
0.25 0.35 -
S
td(ON) VDD 0.5 x Rated BVDSS, ID = 0.25A,
-
10 20
ns
tr
RG = 50(Figures 14, 15, 16)
RL = 198for BVDSS = 100V
-
15 25
ns
td(OFF) RL = 118for BVDSS = 60V
-
15 25
ns
MOSFET Switching Times are Essentially Inde-
tf
pendent of Operating Temperature
-
10 20
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg(TOT) VGS = 10V, ID = 1.2A, VDS = 0.8 x Rated BVDSS -
2.0 3.0
nC
(Figures 13, 16, 17) Gate Charge is Essentially
Independent of Operating Temperature
Qgs
- 1.0 -
nC
Qgd
- 1.0 -
nC
CISS
COSS
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 10)
-
50
-
pF
-
20
-
pF
CRSS
-
5
-
pF
5-2
 

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