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IRFD1Z2 View Datasheet(PDF) - Intersil

Part Name
Description
View to exact match
IRFD1Z2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Semiconductor
July 1998
IRFD1Z0, IRFD1Z1,
IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,
N-Channel Power MOSFETs
Features
• 0.4A and 0.5A, 60V and 100V
• rDS(ON) = 2.4and 3.2
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17451.
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD1Z0
HEXDIP
IRFD1Z0
IRFD1Z1
HEXDIP
IRFD1Z1
IRFD1Z2
HEXDIP
IRFD1Z2
IRFD1Z3
HEXDIP
IRFD1Z3
NOTE: When ordering, use the entire part number.
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2313.1
 

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