SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
FEATURES
ᴌHigh Capacitance Ratio : C2V/C9V=3.7ᴕ5.0
ᴌLow rS : rS=0.5ή(Max.).
ᴌSmall Package.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
VR
Tj
Tstg
RATING
18
150
-55ᴕ150
UNIT
V
ᴱ
ᴱ
KDV1430
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE (C2V)
UNIT
A
69.14ᴕ71.23
B
71.09ᴕ73.24
pF
C
73.09ᴕ75.31
D
75.15ᴕ77.43
Marking
Grade
L3 Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
C2V
C4V
Capacitance
C6V
C9V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=10ỌA
VR=10V
VR=2V, f=1MHz
VR=4V, f=1MHz
VR=6V, f=1MHz
VR=9V, f=1MHz
C2V/C9V, f=1MHz
VR=2V, f=70MHz
1998. 7. 24
Revision No : 0
MIN.
16
-
69.14
43.09
25.05
15.44
3.7
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-
100
77.43
56.24
34.57
20.1
5.0
0.5
UNIT
V
nA
pF
ή
1/2