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Part Name
Description
K3520PQ-XH View Datasheet(PDF) - KEC
Part Name
Description
View to exact match
K3520PQ-XH
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
KEC
K3520PQ-XH Datasheet PDF : 0 Pages
DIE INFORMATION
K3520PQ-XH
2000
S2
G2
S1
G1
BOTTOM : COMMON DRAIN
CONTENTS
Wafer size
Wafer thickness
Front Metal
Back Metal
Passivation Layer
Die Size (with scribe lane)
Scribe lane width
Gate Pad Size
Die edge to gate Pad
Die edge to Source Pad
Gross Die(per Wafer)
8 inch notch type
180um
A
ℓ
-4um
Ti/Ni/Ag-1.4um
Yes
2000
×
1080
㎛
2
60
㎛
170
×
163
㎛
2
93
㎛
70
㎛
13,470ea
VALUE
2010. 4. 29
Revision No : 0
3/3
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