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IRFP064VPBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP064VPBF HEXFET® Power MOSFET IR
International Rectifier IR
IRFP064VPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Optimized for SMPS Applications
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 95501
IRFP064VPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 5.5m
ID = 130A‡
S
TO-247AC
Max.
130‡
95
520
250
1.7
± 20
130
25
4.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.24
–––
Max.
0.60
–––
40
Units
°C/W
1
07/06/04
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