IRFD9014PBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

IRFD9014PBF

Power MOSFET

Vishay Semiconductors 

IRFD9014, SiHFD9014

Vishay Siliconix

D.U.T.

+

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

Rg

• dV/dt controlled by Rg

+

• ISD controlled by duty factor “D”

• D.U.T. - device under test

- VDD

Note

• Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = - 10 Va

D.U.T. lSD waveform

Reverse

recovery

Body diode forward

current

D.U.T. VDS waveform

current

dI/dt

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode forward drop

Inductor current

Ripple ≤ 5 %

ISD

Note

a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91136.

Document Number: 91136

S10-2463-Rev. C, 08-Nov-10

www.vishay.com

7

Share Link: