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IRFBC30A View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFBC30A
Vishay
Vishay Semiconductors Vishay
IRFBC30A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFBC30A, SiHFBC30A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 50 V, ID = 2.2 Ab
600
-
-
V
-
0.67
-
V/°C
2.0
-
4.5
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
2.2
Ω
2.1
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
-
510
-
VDS = 25 V,
-
70
-
f = 1.0 MHz, see fig. 5
-
3.5
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
730
-
VGS = 0 V VDS = 480 V, f = 1.0 MHz
-
19
-
VDS = 0 V to 480 Vc
-
31
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
23
Qgs
VGS = 10 V
ID = 3.6 A, VDS = 480 V
see fig. 6 and 13b
-
-
5.4
nC
Qgd
-
-
11
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
VDD = 300 V, ID = 3.6 A,
RG = 12 Ω, RD = 82 Ω, see fig. 10b
-
9.8
-
-
13
-
ns
-
19
-
-
12
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
3.6
A
-
-
14
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
-
-
1.6
V
trr
-
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb
400
600
ns
Qrr
-
1.1
1.7
µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com
2
Document Number: 91108
S-81243-Rev. A, 21-Jul-08
 

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