IRFBC30APBF View Datasheet(PDF) - International Rectifier
Part Name
Description
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IRFBC30APBF Datasheet PDF : 8 Pages
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IRFBC30APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– –––
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.67 –––
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 2.2
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.5
––– ––– 25
IDSS
Drain-to-Source Leakage Current
––– ––– 250
Gate-to-Source Forward Leakage
––– ––– 100
IGSS
Gate-to-Source Reverse Leakage
––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
V
V/°C
Ω
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.2A
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
2.1 ––– –––
––– ––– 23
––– ––– 5.4
––– ––– 11
––– 9.8 –––
––– 13 –––
––– 19 –––
––– 12 –––
––– 510 –––
––– 70 –––
––– 3.5 –––
––– 730 –––
––– 19 –––
––– 31 –––
S VDS = 50V, ID = 2.2A
ID = 3.6A
nC VDS = 480V
VGS = 10V, See Fig. 6 and 13
VDD = 300V
ns ID = 3.6A
RG = 12Ω
RD = 82Ω,See Fig. 10
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
–––
290
mJ
–––
3.6
A
–––
7.4
mJ
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
–––
0.50
–––
1.7
–––
°C/W
62
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
MOSFET symbol
D
––– ––– 3.6
A
showing the
integral reverse
G
––– ––– 14
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
––– ––– 1.6 V TJ = 25°C, IS = 3.6A, VGS = 0V
––– 400 600 ns TJ = 25°C, IF = 3.6A
––– 1.1 1.7 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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