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IRFB260NPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFB260NPBF
IR
International Rectifier IR
IRFB260NPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFB260NPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
–––
–––
2.0
–––
–––
–––
–––
––– –––
0.26 –––
––– 0.040
––– 4.0
––– 25
––– 250
––– 100
––– -100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 34A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
29 ––– –––
––– 150 220
S VDS = 50V, ID = 34A
ID = 34A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– 24 37 nC VDS = 160V
––– 67 100
VGS = 10V „
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 17 –––
VDD = 100V
––– 64 ––– ns ID = 34A
––– 52 –––
RG = 1.8
––– 50 –––
VGS = 10V „
Ciss
Input Capacitance
Coss
Output Capacitance
––– 4220 –––
––– 580 –––
VGS = 0V
VDS = 25V
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
––– 140 –––
––– 5080 –––
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
––– 230 –––
––– 500 –––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy‚
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
450
34
38
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 56
A showing the
––– ––– 220
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V „
––– 240 360 ns TJ = 25°C, IF = 34A
––– 2.1 3.2 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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