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HUFA76439P3 View Datasheet(PDF) - Fairchild Semiconductor

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Description
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HUFA76439P3 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HUFA76439P3, HUFA76439S3S
Typical Performance Curves (Continued)
1000
100
100µs
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
120
90
60
TJ = 175oC
30
TJ = -55oC
TJ = 25oC
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
150
VGS = 10V
VGS = 5V
120
VGS = 4V
90
60
30
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 3.5V
VGS = 3V
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
25
ID = 75A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
20
ID = 50A
15
ID = 25A
10
5
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
VGS = 10V, ID = 75A
1.5
1.0
0.5
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
HUFA76439P3, HUFA76439S3S Rev. B1
 

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