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HUFA76432P3 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
HUFA76432P3 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs Fairchild
Fairchild Semiconductor Fairchild
HUFA76432P3 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HUFA76432P3, HUFA76432S3S
Typical Performance Curves (Continued)
400
200
SINGLE PULSE
100
TJ
TC
=
=
MAX RATED
25oC
100
100µs
STARTING TJ = 25oC
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
10ms
1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
STARTING TJ = 150oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
50 VDD = 15V
40
30
20
10
0
1.5
TJ= 175oC
TJ= -55oC
TJ= 25oC
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
60
VGS = 10V
50
40
VGS = 5V
VGS = 4V
VGS = 3.5V
30
20
10
0
0
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
50
ID = 55A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = 37A
TC = 25oC
40
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
VGS = 10V, ID = 59A
30
1.5
ID = 18A
20
1.0
10
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.5
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA76432P3, HUFA76432S3S Rev. B
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