H27UAG8T2B View Datasheet(PDF) - Hynix Semiconductor

Part Name

Description

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H27UAG8T2B

16Gbit (2048 M x 8 bit) NAND Flash Memory

Hynix Semiconductor 

Release

H27UAG8T2B Series

16Gb (2048M x 8bit) NAND Flash

Note:

Data Input cycle is accepted to data register on the rising edge of WE#, when CLE and CE# and ALE are low,

and device is not Busy state.

3.4. Data Output Cycle Timings (CLE=L, WE#=H, ALE=L, WP#=H)

■ Figure 9. Data output cycle timings

CE#

RE#

tREA

tRC

t REH

tREA

tRHZ

I/Ox

Dout

t RR

Dout

tCHZ

tREA

tRHZ

tRHOH

Dout

R/B#

Notes:

1. Transition is measured +/-200mV from steady state voltage with load.

This parameter is sampled and not 100% tested. ( tCHZ, tRHZ)

2. tRLOH is valid when frequency is higher than 33MHz.

tRHOH starts to be valid when frequency is lower than 33MHz.

3.5. Data Output Cycle Timings (EDO type, CLE=L, WE#=H, ALE=L)

■ Figure 10. Data output cycle timings (EDO)

CE#

RE#

I/Ox

R/B#

tRC

tRP

tREH

tREA

tCR

tRR

tREA

tRLOH

Dout

Notes:

1. Transition is measured +/-200mV from steady state voltage with load.

This parameter is sampled and not 100% tested. ( tCHZ, tRHZ)

Rev 1.0 / Aug. 2010

tCHZ

tRHZ

tRHOH

Dout

: Don’t care

24

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