H27UAG8T2B View Datasheet(PDF) - Hynix Semiconductor

Part Name

Description

View to exact match

H27UAG8T2B

16Gbit (2048 M x 8 bit) NAND Flash Memory

Hynix Semiconductor 

2.5. Pin Capacitance (TA=25°C, F=1.0㎒)

Release

H27UAG8T2B Series

16Gb (2048M x 8bit) NAND Flash

Symbol

CIN

CI/O

Parameter

Test

Condition

Min

Input Capacitance

VIN = 0V

-

Input/Output Capacitance

VIN = 0V

-

Max

10

10

Unit

ß‹

ß‹

2.6. Program/ Read / Erase Characteristics

Parameter

Symbol

Min

Program (following 10h)

tPROG

-

Cache Program (following 15h)

tCBSYW

-

multi plane Program / multi plane Cache

Program / multi plane Copy-Back Program

tDBSY

-

(following 11h)

Cache Read / multi plane Cache Read

(following 31h/3Fh)

tCBSYR

-

Block Erase / multi plane Block Erase

tBERS

-

Number of partial Program Cycles in the

same page

NOP

-

Notes:

1. Typical value is measured at VCC=3.3V, TA=25℃. Not 100% tested.

Typ

1600

-

3

3

2.5

-

Max

5000

5000

5

200

10

1

Unit

㎲

㎲

㎲

㎲

㎳

cycles

Rev 1.0 / Aug. 2010

16

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