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FQD13N06L View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQD13N06L
Fairchild
Fairchild Semiconductor Fairchild
FQD13N06L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C --
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
0.05
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.5
V
VGS = 10 V, ID = 5.5 A
VGS = 5 V, ID = 5.5 A
-- 0.092 0.115
-- 0.115 0.145
VDS = 25 V, ID = 5.5 A (Note 4)
--
6
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 270 350
pF
--
95 125
pF
--
17
23
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 30 V, ID = 6.8 A,
RG = 25
--
8
25
ns
--
90 190
ns
--
20
50
ns
(Note 4, 5)
--
40
90
ns
VDS = 48 V, ID = 13.6 A,
-- 4.8 6.4
nC
VGS = 5 V
-- 1.6
--
nC
(Note 4, 5)
--
2.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
11
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
44
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 13.6 A,
--
45
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
45
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 870µH, IAS = 11A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 13.6A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
 

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