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FGB3040CS View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FGB3040CS Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Package Marking and Ordering Information
Device Marking
3040CS
3040CS
Device
FGB3040CS
FGB3040CS
Package
TO-263 6 Lead
TO-263 6 Lead
Reel Size
300mm
Tube
Tape Width
24mm
N/A
Quantity
800
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
IGEO
ICES
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 17
TJ = -40 to 150oC
ICE = 10mA, VGE = 0V
Collector to Emitter Breakdown Voltage RGE = 0, See Fig. 17
TJ = -40 to 150oC
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TC = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Gate to Emitter Leakage Current
VGE = ±10V
Collector to Emitter Leakage Current
VCES = 250V,
See Fig. 13
IECS
Emitter to Collector Leakage Current
VEC = 24V,
See Fig. 13
R1
Series Gate Resistance
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V
ICE(ON) Collector to Emitter On State Current VCE = 5V, VGE = 5V
Dynamic Characteristics
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
See Fig. 5
TC = 150oC
See Fig. 6
TC = 150oC
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP
βAREA
β5Ω
β20Ω
Gate to Emitter Plateau Voltage
Emitter Sense Area Ratio
Emitter Current Sense Ratio
Emitter Current Sense Ratio
Switching Characteristics
ICE = 10A, VCE = 12V,
VGE = 5V, See Fig. 16
ICE = 1mA, VCE = VGE
See Fig. 12
ICE = 10A, VCE = 12V
Sense Area/Total Area
TC = 25oC
TC = 150oC
ICE = 8.0A, VGE = 5V, RSENSE = 5 Ω
ICE = 9.0A, VGE = 5V, RSENSE = 20 Ω
370 410 430 V
390 430 450 V
30 -
-
V
±12 ±14 -
V
-
- ±9 μA
-
- 25 μA
-
-
1 mA
-
-
1
mA
-
- 40
- 100 - Ω
- 1.3 1.6 V
- 1.6 1.85 V
- 1.8 2.35 V
- 37 -
A
- 15 - nC
1.3 1.6 2.2
V
0.75 1.1 1.8
- 3.0 -
V
- 1/200 -
-
- 230 -
-
550 640 765 -
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
trR
Current Rise Time-Resistive
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 14
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500μHy,
tfL
Current Fall Time-Inductive
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 14
SCIS Self Clamped inductive Switching
TJ = 25°C, L = 3.0mHy, ICE = 14.2A,
RG = 1k Ω, VGE = 5V, See Fig. 3&4
Thermal Characteristics
RθJC Thermal Resistance Junction to Case All Packages
- 0.6 4 μs
- 1.5 7 μs
- 4.7 15 μs
- 2.6 15 μs
-
- 300 mJ
-
-
1.0 oC/W
FGB3040CS Rev. C1
2
www.fairchildsemi.com
 

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