STE53NA50 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STE53NA50

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics 

STE53NA50

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

ST E53NA50

VDSS

500 V

RDS(on)

< 0.085 Ω

ID

53 A

s TYPICAL RDS(on) = 0.075 Ω

s HIGH CURRENT POWER MODULE

s AVALANCHE RUGGED TECHNOLOGY

s VERY LARGE SOA - LARGE PEAK POWER

CAPABILITY

s EASY TO MOUNT

s SAME CURRENT CAPABILITY FOR THE

TWO SOURCE TERMINALS

s EXTREMELY LOW Rth (Junction to case)

s VERY LOW INTERNAL PARASITIC

INDUCTANCE

s ISOLATED PACKAGE UL RECOGNIZED

APPLICATIONS

s SMPS & UPS

s MOTOR CONTROL

s WELDING EQUIPMENT

s OUTPUT STAGE FOR PWM, ULTRASONIC

CIRCUITS

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

V D GR

V GS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•) Drain Current (pulsed)

Pto t Total Dissipation at Tc = 25 oC

Derating Factor

Tst g St orage Temperature

Tj

Max. Operating Junction Temperature

VISO Insulation Withhstand Voltage (AC-RMS)

(•) Pulse width limited by safe operating area

February 1998

Va l u e

500

500

± 30

53

33

212

460

3.68

-55 to 150

150

2500

Unit

V

V

V

A

A

A

W

W/oC

oC

oC

V

1/7

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