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KM44H16040BB-GZ View Datasheet(PDF) - Samsung

Part Name
Description
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KM44H16040BB-GZ
Samsung
Samsung Samsung
KM44H16040BB-GZ Datasheet PDF : 49 Pages
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128Mb DDR SDRAM
Target
11. IBIS: I/V Characteristics for Input and Output Buffers
11.1 Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I
curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines the of the V-I curve of below Figure.
Maximum
Nominal High
Nominal Low
Minimum
Vout(V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I
curve of below Figure.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve of below Figrue
Minumum
Nominal Low
Nominal High
Maximum
Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7,
for device drain to source voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device
drain to source voltages from 0 to VDDQ/2
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
- 45 of 63 -
REV. 0.61 August 9. '99
 

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