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KM44H16030B-G0 View Datasheet(PDF) - Samsung

Part Name
Description
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KM44H16030B-G0 Datasheet PDF : 49 Pages
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128Mb DDR SDRAM
Target
Revision History
Version 0 (May, 1998)
- First version for internal review
Version 0.1(June, 1998)
- Added x4 organization
Version 0.2(Sep,1998)
1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence.
2. In power down mode timing diagram, NOP condition is added to precharge power down exit.
Version 0.3(Dec,1998)
- Added QFC Function.
- Added DC current value
- Reduce I/O capacitance values
Version 0.4(Feb,1999)
-Added DDR SDRAM history for reference(refer to the following page)
-Added low power version DC spec
Version 0.5(Apr,1999)
-Revised following first showing for JEDEC standard
-Added DC target current based on new DC test condition
Version 0.6(July 1,1999)
1.Modified binning policy
From
To
-Z (133Mhz)
-Z (133Mhz/266Mbps@CL=2)
-8 (125Mhz)
-Y (133Mhz/266Mbps@CL=2.5)
-0 (100Mhz)
-0 (100Mhz/200Mbps@CL=2)
2.Modified the following AC spec values
tAC
tDQSCK
tDQSQ
tDS/tDH
tCDLR*1
tPRE*1
tRPST*1
tHZQ*1
From.
-Z
-0
+/- 0.75ns
+/- 1ns
+/- 0.75ns
+/- 1ns
+/- 0.5ns
+/- 0.75ns
0.5 ns
0.75 ns
2.5tCK-tDQSS
2.5tCK-tDQSS
1tCK +/- 0.75ns
1tCK +/- 1ns
tCK/2 +/- 0.75ns
tCK/2 +/- 1ns
tCK/2 +/- 0.75ns
tCK/2 +/- 1ns
-Z
+/- 0.75ns
+/- 0.75ns
+/- 0.5ns
0.5 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/- 0.75ns
To.
-Y
+/- 0.75ns
+/- 0.75ns
+/- 0.5ns
0.5 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/- 0.75ns
-0
+/- 0.8ns
+/- 0.8ns
+/- 0.6ns
0.6 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/-0.8ns
*1 : Changed description method for the same functionality. This means no difference from the previous version.
3.Changed the following AC parameter symbol
From.
To.
Output data access time from CK/CK
tDQCK
tAC
Version 0.61(August 9,1999)
- Changed the some values of "write with auto precharge" table for different bank in page 30.
Asserted
command
Read
Read + AP*1
For Different Bank
3
4
Old
New
Old
New
Legal
Illegal
Legal
Illegal
Legal
Illegal
Legal
Illegal
- 2 of 63 -
REV. 0.61 August 9. '99
 

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