KM44H16040T-FY View Datasheet(PDF) - Samsung

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KM44H16040T-FY

DDR SDRAM Specification Version 0.61

Samsung 

128Mb DDR SDRAM

Target

3.3.2 Burst Write Operation

The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising

edge of the clock(CK). The address inputs determine the starting column address. There is no write latency

relative to DQS required for burst write cycle. The first data of a burst write cycle must be applied on the DQ

pins tDS(Data-in setup time) prior to data strobe edge enabled after tDQSS from the rising edge of the

clock(CK) that the write command is issued. The remaining data inputs must be supplied on each subsequent

falling and rising edge of Data Strobe until the burst length is completed. When the burst has been finished, any

additional data supplied to the DQ pins will be ignored.

< Burst Length=4 >

0

CK

CK

Command NOP

DQS

DQ ′s

1

2

3

4

5

6

WRITEA

NOP

WRITEB

NOP

NOP

NOP

tDQSSmax

tWPRES*1

*1

Din 0 Din 1 Din 2 Din 3 Din 0 Din 1 Din 2 Din 3

7

NOP

8

NOP

Figure 10. Burst write operation timing

1. The soecific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown

(DQS going from High_Z to logic Low) applies when no writes were previously in progress on the bus.

If a previous write was in progress, DQS could be High at this time, depending on tDQSS.

(Refer to AC parameter table in page 42)

- 21 of 63 -

REV. 0.61 August 9. '99

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