CAT28F512G-12T View Datasheet(PDF) - Catalyst Semiconductor => Onsemi

Part Name

Description

View to exact match

CAT28F512G-12T

512K-Bit CMOS Flash Memory

Catalyst Semiconductor => Onsemi 

CAT28F512

FUNCTION TABLE(1)

Mode

CE

Read

VIL

Output Disable

VIL

Standby

VIH

Signature (MFG)

VIL

Signature (Device)

VIL

Program/Erase

VIL

Write Cycle

VIL

Read Cycle

VIL

Pins

OE

WE

VPP

I/O

Notes

VIL

VIH

VPPL

DOUT

VIH

VIH

X

High-Z

X

X

VPPL

High-Z

VIL

VIH

X

31H

A0 = VIL, A9 = 12V

VIL

VIH

X

B8H

A0 = VIH, A9 = 12V

VIH

VIL

VPPH

DIN

See Command Table

VIH

VIL

VPPH

DIN

During Write Cycle

VIL

VIH

VPPH

DOUT

During Write Cycle

WRITE COMMAND TABLE

Commands are written into the command register in one or two write cycles. The command register can be altered

only when VPP is high and the instruction byte is latched on the rising edge of WE. Write cycles also internally latch

addresses and data required for programming and erase operations.

Mode

Set Read

First Bus Cycle

Operation Address DIN

Write

X

00H

Pins

Operation

Read

Second Bus Cycle

Address

DIN

AIN

DOUT

DOUT

Read Sig. (MFG)

Write

X

90H

Read

00

31H

Read Sig. (Device)

Write

X

90H

Read

01

B8H

Erase

Write

X

20H

Write

X

20H

Erase Verify

Write

AIN

A0H

Read

X

DOUT

Program

Write

X

40H

Write

AIN

DIN

Program Verify

Write

X

C0H

Read

X

DOUT

Reset

Write

X

FFH

Write

X

FFH

Note:

(1) Logic Levels: X = Logic ‘Do not care’ (VIH, VIL, VPPL, VPPH)

7

Doc. No. 1084, Rev. H

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