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CAT28F512 View Datasheet(PDF) - Catalyst Semiconductor => Onsemi

Part Name
Description
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CAT28F512
Catalyst
Catalyst Semiconductor => Onsemi Catalyst
CAT28F512 Datasheet PDF : 15 Pages
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CAT28F512
A.C. CHARACTERISTICS, Program/Erase Operation
VCC = +5V ±10%, unless otherwise specified.
JEDEC Standard
Symbol Symbol
Parameter
tAVAV
tWC Write Cycle Time
tAVWL
tAS
Address Setup Time
tWLAX
tAH
Address Hold Time
tDVWH
tDS
Data Setup Time
tWHDX
tDH
Data Hold Time
tELWL
tCS
CE Setup Time
tWHEH
tCH
CE Hold Time
tWLWH
tWP
WE Pulse Width
tWHWL
tWPH WE High Pulse Width
tWHWH1(2)
-
Program Pulse Width
tWHWH2(2)
-
Erase Pulse Width
tWHGL
-
Write Recovery Time Before Read
tGHWL
-
Read Recovery Time Before Write
tVPEL
-
VPP Setup Time to CE
28F512-90 28F512-12 28F512-15
Min. Max. Min. Max. Min. Max. Unit
90
120
150
ns
0
0
0
ns
40
40
40
ns
40
40
40
ns
10
10
10
ns
0
0
0
ns
0
0
0
ns
40
40
40
ns
20
20
20
ns
10
10
10
µs
9.5
9.5
9.5
ms
6
6
6
µs
0
0
0
µs
100
100
100
ns
ERASE AND PROGRAMMING PERFORMANCE(1)
Parameter
Chip Erase Time(3)(5)
28F512-90
28F512-12
28F512-15
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit
0.5 10
0.5 10
0.5 10 sec
Chip Program Time(3)(4)
1
6
1
6
1
6
sec
Note:
(1) Please refer to Supply characteristics for the value of VPPH and VPPL. The VPP supply can be either hardwired or switched. If VPP is switched,
VPPL can be ground, less than VCC + 2.0V or a no connect with a resistor tied to ground.
(2) Program and Erase operations are controlled by internal stop timers.
(3) ‘Typicals’ are not guaranteed, but based on characterization data. Data taken at 25°C, 12.0V VPP.
(4) Minimum byte programming time (excluding system overhead) is 16 µs (10 µs program + 6 µs write recovery), while maximum is 400 µs/
byte (16 µs x 25 loops). Max chip programming time is specified lower than the worst case allowed by the programming algorithm since
most bytes program significantly faster than the worst case byte.
(5) Excludes 00H Programming prior to Erasure.
Doc. No. 1084, Rev. H
6
 

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