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CAT28F001 View Datasheet(PDF) - Catalyst Semiconductor => Onsemi

Part Name
Description
View to exact match
CAT28F001
Catalyst
Catalyst Semiconductor => Onsemi Catalyst
CAT28F001 Datasheet PDF : 18 Pages
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CAT28F001
1 Megabit CMOS Boot Block Flash Memory
Licensed Intel
second source
FEATURES
s Fast Read Access Time: 70/90/120/150 ns
s On-Chip Address and Data Latches
s Blocked Architecture
— One 8 KB Boot Block w/ Lock Out
• Top or Bottom Locations
— Two 4 KB Parameter Blocks
— One 112 KB Main Block
s Low Power CMOS Operation
s 12.0V ± 5% Programming and Erase Voltage
s Automated Program & Erase Algorithms
s High Speed Programming
s Commercial, Industrial and Automotive
Temperature Ranges
s Deep Powerdown Mode
— 0.05 µA ICC Typical
— 0.8 µA IPP Typical
s Hardware Data Protection
s Electronic Signature
s 100,000 Program/Erase Cycles and 10 Year
Data Retention
s JEDEC Standard Pinouts:
— 32 pin DIP
— 32 pin PLCC
— 32 pin TSOP
s Reset/Deep Power Down Mode
DESCRIPTION
The CAT28F001 is a high speed 128K X 8 bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after sale
code updates.
The CAT28F001 has a blocked architecture with one 8
KB Boot Block, two 4 KB Parameter Blocks and one 112
KB Main Block. The Boot Block section can be at the top
or bottom of the memory map and includes a reprogram-
ming write lock out feature to guarantee data integrity. It
is designed to contain secure code which will bring up
the system minimally and download code to other loca-
tions of CAT28F001.
The CAT28F001 is designed with a signature mode
which allows the user to identify the IC manufacturer and
device type. The CAT28F001 is also designed with on-
Chip Address Latches, Data Latches, Programming and
Erase Algorithms.
The CAT28F001 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, PLCC or TSOP packages.
BLOCK DIAGRAM
WRITE STATE
MACHINE
RP
WE
COMMAND
REGISTER
ADDRESS
COUNTER
ERASE VOLTAGE
SWITCH
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
I/O0–I/O7
I/O BUFFERS
DATA
LATCH
STATUS
REGISTER
SENSE
AMP
CE
OE
A0–A16
VOLTAGE VERIFY
SWITCH
© 1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Y-DECODER
X-DECODER
1
Y-GATING
8K-BYTE BOOT BLOCK
4K-BYTE PARAMETER BLOCK
4K-BYTE PARAMETER BLOCK
112K-BYTE MAIN BLOCK
28F001 F01
Doc. No. 25071-00 2/98 F-1
 

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