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BUZ111SE3045A View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ111SE3045A
Infineon
Infineon Technologies Infineon
BUZ111SE3045A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 111S
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 80 A
Gate to drain charge
VDD = 40 V, ID = 80 A
Gate charge total
VDD = 40 V, ID = 80 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 80 A
Qgs
-
Qgd
-
Qg
-
V(plateau)
-
18 27 nC
61 91.5
125 185
5.45 - V
Reverse Diode
Inverse diode continuous forward current
IS
TC = 25 ˚C
-
-
80 A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM
-
-
320
Inverse diode forward voltage
VGS = 0 V, IF = 160 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
VSD
- 1.25 1.8 V
trr
-
105 160 ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr
- 0.29 0.45 µC
Data Sheet
4
05.99
 

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