BUZ111S View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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BUZ111S

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 111S

Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

VDS≥2*ID*RDS(on)max , ID = 80 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 80 A,

RG = 2.4 Ω

gfs

Ciss

Coss

Crss

t d(on)

30 73

-S

- 3600 4500 pF

- 1100 1375

- 550 690

-

25 37 ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 80 A,

RG = 2.4 Ω

tr

-

30 45

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 80 A,

RG = 2.4 Ω

t d(off)

-

65 95

Fall time

VDD = 30 V, VGS = 10 V, ID = 80 A,

RG = 2.4 Ω

tf

-

40 60

Data Sheet

3

05.99

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