BUZ111S View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BUZ111S Datasheet PDF : 8 Pages
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SIPMOS® Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
• 175˚C operating temperature
BUZ 111S
VDS
55 V
RDS(on) 0.008 Ω
ID
80 A
Type
BUZ111S
BUZ111S E3045A
BUZ111S E3045
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4003-A2 Tube
P-TO263-3-2 Q67040-S4003-A6 Tape and Reel
P-TO263-3-2 Q67040-S4003-A5 Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 ˚C, 1)
TC = 100 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25 Ω
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 80 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
80
80
320
700
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Sheet
1
05.99
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