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ADG661BRU View Datasheet(PDF) - Analog Devices

Part NameADG661BRU ADI
Analog Devices ADI
DescriptionLC2MOS Precision 5 V Quad SPST Switches
ADG661BRU Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ADG661/ADG662/ADG663
Typical Performance Characteristics
50
50
TA = +25؇C
40
40
VDD = +5V
VSS = –5V
30
30
20
20
VDD = +5V
VSS = –5V
10
10
+85؇C
+25؇C
0
–5 –4 –3 –2 –1 0 1 2 3 4 5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
Figure 1. On Resistance as a
Function of VD (VS) Dual Supplies
0
–5 –4 –3 –2 –1 0 1 2 3 4 5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
Figure 2. On Resistance as a
Function of VD (VS) for
Different Temperatures
50
TA = +25°C
40
VDD = +5V
30
VSS = 0V
20
10
0
0
1
2
3
4
5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
Figure 3. On Resistance as a
Function of VD (VS) Single Supply
10mA
1mA
100A
10A
1A
100nA
VDD = +5V
VSS = –5V
4 SW
1 SW
I–, I+
10nA
10
100 1k 10k 100k 1M 10M
FREQUENCY – Hz
Figure 4. Supply Current vs. Input
Switching Frequency
10
VDD = +5V
VSS = –5V
1
VS = ؎5V
VD = ؎5V
0.1
ID (OFF)
0.01
ID (ON)
0.001
25
IS (OFF)
35 45 55 65 75 85
TEMPERATURE – ؇C
95 105
Figure 5. Leakage Currents as a
Function of Temperature
120
VDD = +5V
VSS = –5V
100
80
60
40
100
1k
10k 100k 1M 10M
FREQUENCY – Hz
Figure 6. Off Isolation vs.
Frequency
0.006
0.004
0.002
VDD = +5V
VSS = –5V
TA = +25؇C
0.000
ID(ON)
ID(OFF)
IS(OFF)
–0.002
–0.004
–0.006
–5 –4 –3 –2 –1 0 1 2 3 4 5
VD OR VS – DRAIN OR SOURCE VOLTAGE
Figure 7. Leakage Currents as a
Function of VD (VS)
110
VDD = +5V
VSS = –5V
100
90
80
70
60
100 1k
10k 100k 1M 10M
FREQUENCY – Hz
Figure 8. Crosstalk vs. Frequency
–6–
REV. 0
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The ADG661, ADG662 and ADG663 are monolithic CMOS devices comprising four independently selectable switches.

These switches feature low, well-controlled on resistance and wide analog signal range, making them ideal for precision analog signal switching.

They are fabricated using Analog Devices advanced linear compatible CMOS (LC2MOS) process, which offers benefits of low leakage currents, ultralow power dissipation and low capacitance for fast switching speeds with minimum charge injection.

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