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ADG661BRU View Datasheet(PDF) - Analog Devices

Part NameADG661BRU ADI
Analog Devices ADI
DescriptionLC2MOS Precision 5 V Quad SPST Switches
ADG661BRU Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ADG661/ADG662/ADG663–SPECIFICATIONS1
Dual Supply (VDD = +5 V ؎ 10%, VSS = –5 V ؎ 10%, GND = 0 V, unless otherwise noted)
Parameter
B Versions
+25؇C – 40؇C to +85؇C
Units
ANALOG SWITCH
Analog Signal Range
RON
VDD to VSS
30
38
50
V
typ
max
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.025
± 0.1
± 2.5
± 0.025
± 0.1
± 2.5
± 0.05
± 0.2
±5
nA typ
nA max
nA typ
nA max
nA typ
nA max
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
DYNAMIC CHARACTERISTICS2
tON
tOFF
Break-Before-Make Time Delay, tD
(ADG663 Only)
Charge Injection
2.4
0.8
0.005
± 0.1
150
275
55
120
80
6
V min
V max
µA typ
µA max
ns typ
ns max
ns typ
ns max
ns typ
pC typ
OFF Isolation
70
dB typ
Channel-to-Channel Crosstalk
90
dB typ
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
VDD
IDD
ISS
9
9
28
0.0001
0.0001
NOTES
1Temperature ranges are as follows: B Versions, –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
+4.5/5.5
–4.5/5.5
1
1
pF typ
pF typ
pF typ
V min/max
V min/max
µA typ
µA max
µA typ
µA max
Test Conditions/Comments
VD = –3.5 V to +3.5 V, IS = –10 mA;
VDD = +4.5 V, VSS = –4.5 V
VDD = +5.5 V, VSS = –5.5 V
VD = ± 4.5 V, VS = ± 4.5 V;
Test Circuit 2
VD = ± 4.5 V, VS = ± 4.5 V;
Test Circuit 2
VD = VS = ± 4.5 V;
Test Circuit 3
VIN = VINL or VINH
RL = 300 , CL = 35 pF;
VS = ± 3 V; Test Circuit 4
RL = 300 , CL = 35 pF;
VS = ± 3 V; Test Circuit 4
RL = 300 , CL = 35 pF;
VS1 = VS2 = +3 V; Test Circuit 5
VS = 0 V, RS = 0 , CL = 10 nF;
Test Circuit 6
RL = 50 , CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 , CL = 5 pF, f = 1 MHz;
Test Circuit 8
f = 1 MHz
f = 1 MHz
f = 1 MHz
VDD = +5.5 V, VSS = –5.5 V
Digital Inputs = 0 V or 5 V
–2–
REV. 0
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The ADG661, ADG662 and ADG663 are monolithic CMOS devices comprising four independently selectable switches.

These switches feature low, well-controlled on resistance and wide analog signal range, making them ideal for precision analog signal switching.

They are fabricated using Analog Devices advanced linear compatible CMOS (LC2MOS) process, which offers benefits of low leakage currents, ultralow power dissipation and low capacitance for fast switching speeds with minimum charge injection.

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