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BCP55M View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BCP55M NPN Silicon AF Transistors Siemens
Siemens AG Siemens
BCP55M Datasheet PDF : 4 Pages
1 2 3 4
BCP 54M ... BCP 56M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BCP 54M
45
-
BCP 55M
60
-
V
-
-
BCP 56M
80
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IB = 0
BCP 54M
45
-
-
BCP 55M
60
-
-
BCP 56M
100 -
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 5 mA, VCE = 2 V
DC current gain 1)
IC = 150 mA, VCE = 2 V
DC current gain 1)
IC = 500 mA, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V
V(BR)EBO 5
ICBO
-
ICBO
-
hFE
25
hFE
40
hFE
25
VCEsat
-
VBE(ON)
-
-
-
-
100 nA
-
20 µA
-
--
-
250 -
-
--
-
0.5 V
-
1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT
-
100
- MHz
1) Pulse test: t 300µs, D = 2%
SSeemmicioconndduuctcotor rGGrorouupp
22
Au 1-19918-1-1919-081
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