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BA479G-TR View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
BA479G-TR
Vishay
Vishay Semiconductors Vishay
BA479G-TR Datasheet PDF : 4 Pages
1 2 3 4
BA479G, BA479S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part Symbol Min.
Typ.
Max.
Unit
Forward voltage
IF = 20 mA
VF
1000
mV
Reverse current
VR = 30 V
IR
50
nA
Diode capacitance
f = 100 MHz, VR = 0
CD
0.5
pF
Differential forward resistance
f = 100 MHz, IF = 1.5 mA
rf
50
Ω
Reverse impedance
f = 100 MHz, VR = 0
BA479G
zr
BA479S
zr
5
9
kΩ
kΩ
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
τ
4
µs
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0
0.4
0.8
1.2
1.6
2.0
95 9735
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
20
Π - Circuit with 10 dB Attenuation
0
V0 = 40 dBmV
f1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
0
20
40
60
80
95 9733 f2 , modulated with 200 kHz, m = 100 % (MHz)
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2
10 000
1000
100
f > 20 MHz
Tj = 25 °C
10
1
0.001 0.01
0.1
1
10
95 9734
IF - Forward Current (mA)
Figure 2. Differential Forward Resistance vs. Forward Current
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85527
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 05-Aug-10
 

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