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KSB1366Y View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KSB1366Y
Fairchild
Fairchild Semiconductor Fairchild
KSB1366Y Datasheet PDF : 4 Pages
1 2 3 4
KSB1366
LOW FREQUENCY POWER AMPLIFIER
• Complement to KSD2012
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
fT
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
IC = - 50mA, IB = 0
VCB = - 60V, IE = 0
VEB = - 7V, IC = 0
VCE = - 5V, IC = - 0.5A
VCE = - 5V, IC = - 3A
IC = - 2A, IB = - 0.2A
VCE = - 5V, IC = - 0.5A
VCE = - 5V, IC = - 0.5A
hFE Classification
Classification
hFE1
Y
100 ~ 200
1
TO-220F
1.Base 2.Collector 3.Emitter
Value
- 60
- 60
-7
-3
- 0.5
2
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Min.
- 60
100
20
Typ.
Max.
- 100
- 100
320
Units
V
µA
µA
- 0.5
- 0.7
9
-1
V
-1
V
MHz
G
150 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
 

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