APT5010 View Datasheet(PDF) - Advanced Power Technology

Part Name

Description

View to exact match

APT5010

POWER MOS 7™ FREDFET

Advanced Power Technology 

APT5010B2FLL

APT5010LFLL

500V 46A 0.100W

POWER MOS 7TM FREDFET B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)

and Qg. Power MOS 7TM combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

T-MAX™

TO-264

LFLL

D

• Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package G

• FAST RECOVERY BODY DIODE

S

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

VDSS

ID

IDM

VGS

VGSM

PD

TJ,TSTG

TL

IAR

EAR

EAS

Parameter

APT5010

Drain-Source Voltage

500

Continuous Drain Current @ TC = 25°C

L Pulsed Drain Current 1

ICA Gate-Source Voltage Continuous

N Gate-Source Voltage Transient

H Total Power Dissipation @ TC = 25°C

EC N Linear Derating Factor

T IO Operating and Storage Junction Temperature Range

E T Lead Temperature: 0.063" from Case for 10 Sec.

NC MA Avalanche Current 1 (Repetitive and Non-Repetitive)

VA R Repetitive Avalanche Energy 1

AD INFO Single Pulse Avalanche Energy 4

46

184

±30

±40

500

4.0

-55 to 150

300

46

50

1800

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

500

ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)

46

RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])

IDSS

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)

IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

3

0.100

250

1000

±100

5

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

UNIT

Volts

Amps

Ohms

µA

nA

Volts

USA

EUROPE

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

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