74HC00DB View Datasheet(PDF) - Philips Electronics
Part Name
Description
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74HC00DB Datasheet PDF : 17 Pages
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Philips Semiconductors
Quad 2-input NAND gate
Product specification
74HC00; 74HCT00
Type 74HCT00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
Tamb = −40 to +85 °C; note 1
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
input leakage current
IOZ
3-state output OFF current
ICC
quiescent supply current
∆ICC
additional supply current per input
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
IOZ
ICC
∆ICC
input leakage current
3-state output OFF current
quiescent supply current
additional supply current per input
TEST CONDITIONS
OTHER
VCC (V)
MIN.
VI = VIH or VIL
IO = −20 µA
IO = −4.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 mA
VI = VCC or GND
VI = VIH or VIL;
VO = VCC or GND;
IO = 0
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
4.5 to 5.5
2.0
−
4.4
3.84
−
−
−
−
−
−
4.5 to 5.5 2.0
4.5 to 5.5 −
VI = VIH or VIL
IO = −20 µA
4.5
4.4
IO = −4.0 mA 4.5
3.7
VI = VIH or VIL
IO = 20 µA
4.5
−
IO = 4.0 mA
4.5
−
VI = VCC or GND 5.5
−
VI = VIH or VIL;
5.5
−
VO = VCC or GND;
IO = 0
VI = VCC or GND; 5.5
−
IO = 0
VI = VCC − 2.1 V; 4.5 to 5.5 −
IO = 0
TYP.
1.6
1.2
4.5
4.32
0
0.15
−
−
−
150
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
−
V
0.8
V
−
V
−
V
0.1
V
0.33 V
±1.0 µA
±5.0 µA
20
µA
675 µA
−
V
0.8
V
−
V
−
V
0.1
V
0.4
V
±1.0 µA
±10 µA
40
µA
735 µA
Note
1. All typical values are measured at Tamb = 25 °C.
2003 Jun 30
8
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