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K2640 View Datasheet(PDF) - Fuji Electric

Part Name
Description
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K2640 Datasheet PDF : 2 Pages
1 2
N-channel MOS-FET
500V 0,9Ω 10A 50W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2640-01MR
FAP-IIS Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg); ID=10A; Tc=25°C
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
8
↑↑
9
VDS [V]
Avalanche Energy Derating
Eas=f(starting Tch); VCC=50V; IAV=10A
10
Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
Starting Tch [°C]
VDS [V]
This specification is subject to change without notice!
t [s]
 

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