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2SK1969-01 View Datasheet(PDF) - Fuji Electric

Part Name
Description
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2SK1969-01 Datasheet PDF : 2 Pages
1 2
2SK1969-01
FAP-IIIA Series
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
- Including G-S Zener-Diode
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC Converters
N-channel MOS-FET
60V 0,017Ω 50A 125W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
60
Drain-Gate-Voltage (RGS=20K)
V DGR
60
Continous Drain Current
ID
50
Pulsed Drain Current
I D(puls)
200
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
PD
125
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±16V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=25A
VGS=4V
ID=25A
VGS=10V
Forward Transconductance
g fs
ID=25A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=30V
tr
ID=50A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
tf
RGS=25
I AV
L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr
IF=IDR VGS=0V
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
Min. Typ. Max. Unit
60
V
1,0
1,5 2,0 V
500 µA
1,0 mA
10,0 µA
0,019 0,027
0,013 0,017
20
40
S
2600 3900 pF
1000 1500 pF
630 950 pF
20
30 ns
210 320 ns
520 780 ns
420 630 ns
50
A
50 A
200 A
1,45 2,18 V
85 120 ns
0,16
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
35 °C/W
1,0 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
 

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