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K1529 View Datasheet(PDF) - Toshiba

Part Name
Description
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K1529 Datasheet PDF : 0 Pages
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
2SK1529
High-Power Amplifier Application
z High breakdown voltage
z High forward transfer admittance
z Complementary to 2SJ200
: VDSS = 180 V
: |Yfs| = 4.0 S (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Gatesource voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
180
V
±20
V
10
A
120
W
150
°C
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Marking
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
K1529
Part No. (or abbreviation code)
Lot No.
Note 2
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The RoHS
is the Directive 2002/95/EC of the European Parliament and of the Council of
27 January 2003 on the restriction of the use of certain hazardous substances
in electrical and electronic equipment.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Drain cutoff current
Gate leakage current
Drainsource breakdown voltage
Drainsource saturation voltage
Gatesource cutoff voltage (Note 3)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
VGS (OFF)
|Yfs|
Ciss
Coss
Crss
VDS = 180 V, VGS = 0
VDS = 0, VGS = ±20 V
ID = 10 mA, VGS = 0
ID = 6 A, VGS = 10 V
VDS = 10 V, ID = 0.1 A
VDS = 10 V, ID = 3 A
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
Note 3: VGS (OFF) Classification
0: 0.8 to 1.6 Y: 1.4 to 2.8
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
Min Typ. Max Unit
1.0 mA
— ±0.5 μA
180
V
2.5 5.0
V
0.8
2.8
V
4.0
S
— 700 —
— 150 —
pF
90
2009-12-21
 

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