J411 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
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J411 Datasheet PDF : 6 Pages
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2SJ411
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
0.5
ID = –5 A
Pulsed
0.4
0.3
0.2
TA = 125 ˚C
TA = 75 ˚C
0.1
TA = –25 ˚C
TA = 25 ˚C
0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000 VGS = 0
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
–1
–10
VDS - Drain to Source Voltage - V
–100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
–10 VGS = 0
Pulsed
–1
–0.1
–0.01
–0.001
–0.0001
–0.4 –0.6 –0.8
–1
–1.2 –1.4
VSD - Source to Drain Voltage - V
1000
100
SWITCHING CHARACTERISTICS
tf
td(off)
VDD = –15 V
VGS(on) = –10 V
RG = 10 Ω
tr
10
td(on)
1
–0.1
–1
–10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–12
–30
–8
VDS
–4
–20
VGS
–10
0
0
8
0
16
24
32
Qg - Gate Charge - nC
4
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