J411 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
View to exact match
J411 Datasheet PDF : 6 Pages
| |||
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ411
P-CHANNEL SIGNAL MOS FET
FOR SWITCHING
The 2SJ411 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.
FEATURES
• Radial taping supported
• Can be directly driven by 5-V IC
• Low ON resistance
RDS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A
RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
0.8 ±0.1
0.6 ±0.1
0.6 ±0.1
0.6 ±0.1
1.71.7
0.55 ±0.1
GDS
EQUIVALENT CIRCUIT
Drain (D)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Gate (G)
Internal
Diode PIN
Gate
Source (S)
Protection
Diode
CONNECTIONS
G: Gate
D: Drain
S: Source
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 µs
Duty cycle ≤ 1 %
TA = 25 ˚C
TC = 25 ˚C
RATING
–30
–20/+10
±5.0
±20.0
UNIT
V
V
A
A
1.0
W
6.0
W
150
˚C
–55 to +150
˚C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
The information in this document is subject to change without notice.
Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
|
|
Share Link: 