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SB320 View Datasheet(PDF) - Micro Electro Magnetical Tech

Part Name
Description
View to exact match
SB320
MEMT
Micro Electro Magnetical Tech MEMT
SB320 Datasheet PDF : 1 Pages
1
Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 20 V 3 A Standard VF
TYPE: SB320
Single Anode
ELECTRICAL CHARACTERISTICS
SYM
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM
Ir=0.5mA (for dice form)
Average Rectified Forward Current
IFAV
Maximum Instantaneous Forward Voltage
@ 3 Amperes, Ta=25°C
VF MAX
Spec. Limit
20
3
0.5
Die Sort UNIT
22.5 Volt
Amp
0.49 Volt
Maximum Instantaneous Reverse Voltage
VR= 20 Volt, Ta=25°C
IR MAX
0.3
0.25 mA
Maximum Junction Capacitance @ 0V, 1MHZ Cj MAX
pF
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
IFSM
100
Amp
Operating Junction Temperature
Tj
-65 to +125
°C
Storage Temperatures
TSTG
-65 to +125
°C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
ITEM
um2 Mil2
A Die Size
1524 60.00
A
C
B Top Metal Pad Size
C Passivation Seal
1424 56.1
1444 56.9
D Thickness (Min)
254 10
Thickness (Max)
305 12
B
Top-side Metal
SiO2 Passivation
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
D
P+ Guard Ring
Back-side Metal
 

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