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ADS6616A4A-6 Synchronous DRAM 1M x 16 Bit x 4 Banks A-Data
A-Data Technology A-Data
ADS6616A4A-6 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
A-Data
ADS6616A4A
DC Characteristics II
Parameter
Symbol
Test condition
Speed
Unit Note
-5
-6
-7 -7.5
Burst length=1, One bank active
Operating Current IDD1
105 90
80
80 mA 1
tRCtRC(min),IOL=0mA
Precharge standby
current in power
down mode
IDD2P CKEVIL(max), tCK=min
IDD2PS CKEVIL(max), tCK=
1
mA
1
CKEVIH(min), /CSVIH(min),
tCK=min input signals are
Precharge standby IDD2N changed one time during 2clks.
35
current in Non power
All other pins VDD-0.2V or
mA
down mode
0.2V
CKEVIH(min), tCK=
IDD2NS
8
Input signals are stable.
Active standby
current in power
down mode
IDD3P CKEVIL(max), tCK=min
IDD3PS CKEVIL(max), tCK=
5
mA
5
CKEVIH(min), /CSVIH(min),
tCK=min input signals are
Active standby
IDD3N changed one time during 2clks.
30
current in Non power
All other pins VDD-0.2V or
mA
down mode
0.2V
CKEVIH(min), tCK=
IDD3NS
20
Input signals are stable.
Burst mode operating
IDD4
current
tCKtCK(min),IOL=0 mA
All banks active
185 165 145 145 mA 1
Auto refresh current IDD5
tRRCtRRC(min), All banks
active
120
mA 2
Self refresh current IDD6 CKE0.2V
1
mA
Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output
open.
2. Min. of tRRC is shown at AC characteristics.
Rev 1.1 April, 2001
5
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